학술논문
Reduction Of Spin Injection Efficiency by Interface Spin Scattering
Document Type
Working Paper
Author
Source
Phys. Rev. Lett. 89, 166602 (2002)
Subject
Language
Abstract
We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering. An inverse correlation between spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-LEDs with spin injection efficiencies of 0 to 85%.
Comment: 13 pages, 5 figures; submitted to PRL
Comment: 13 pages, 5 figures; submitted to PRL