학술논문
Optical properties and carrier dynamics in Co-doped ZnO nanorods
Document Type
Working Paper
Author
Sivan, Aswathi K.; Galan-Gonzalez, Alejandro; Di Mario, Lorenzo; Tappy, Nicolas; Hernandez-Ferrer, Javier; Catone, Daniele; Turchini, Stefano; Benito, Ana M.; Maser, Wolfgang K.; Steinvall, Simon Escobar; Morral, Anna Fontcuberta i; Gallant, Andrew; Zeze, Dagou A.; Atkinson, Del; Martelli1, Faustino
Source
Nanoscale Advance 2020
Subject
Language
Abstract
The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic % in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-to-current conversion efficiency (IPCE). Analysis indicates the crucial role of surface defects in determining the electronic behavior. Significantly, Co-doping extends the light absorption of the nanorods into the visible region, increases the surface defects, shortens the non-radiative lifetimes, while leaving the radiative lifetime constant. Furthermore, for 1 atomic % Co-doping the IPCE of the ZnO nanorods is enhanced. These results demonstrate that doping can controllably tune the functional electronic properties of ZnO nanorods for applications.