학술논문
Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu
Document Type
Working Paper
Author
Source
2020 IEEE International Electron Devices Meeting (IEDM), 32.4. 1-32.4. 4
Subject
Language
Abstract
The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing the desirable properties of topological semimetals for back-end-of-line (BEOL) interconnects, we use CoSi as an example to demonstrate the decreasing resistance-area product with scaling and provide material-search guidelines.
Comment: 4 pages, 12 figures
Comment: 4 pages, 12 figures