학술논문
Topological Aspects of Charge-Carrier Transmission across Grain Boundaries in Graphene
Document Type
Working Paper
Author
Source
Nano Lett. 14, 250 (2014)
Subject
Language
Abstract
We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-B\"uttiker formalism within the tight-binding approximation. Calculations reveal a strong suppression of transmission at low energies upon decreasing the density of dislocations with the smallest Burger's vector ${\mathbf b}=(1,0)$. The observed transport anomaly is explained from the point of view of back-scattering due to localized states of topological origin. These states are related to the gauge field associated with all dislocations characterized by ${\mathbf b}=(n,m)$ with $n-m \neq 3q$ ($q \in \mathbb{Z}$). Our work identifies an important source of charge-carrier scattering caused by topological defects present in large-area graphene samples produced by chemical vapor deposition.
Comment: 5 pages, 4 figures
Comment: 5 pages, 4 figures