학술논문
Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
Document Type
Working Paper
Author
Source
Applied Physics Letters 95, 172105 (2009)
Subject
Language
Abstract
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).
Comment: 2 new references added
Comment: 2 new references added