학술논문
Strain engineering of the silicon-vacancy center in diamond
Document Type
Working Paper
Author
Meesala, Srujan; Sohn, Young-Ik; Pingault, Benjamin; Shao, Linbo; Atikian, Haig A.; Holzgrafe, Jeffrey; Gundogan, Mustafa; Stavrakas, Camille; Sipahigil, Alp; Chia, Cleaven; Burek, Michael J.; Zhang, Mian; Wu, Lue; Pacheco, Jose L.; Abraham, John; Bielejec, Edward; Lukin, Mikhail D.; Atature, Mete; Loncar, Marko
Source
Phys. Rev. B 97, 205444 (2018)
Subject
Language
Abstract
We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
Comment: 14 pages, 10 figures
Comment: 14 pages, 10 figures