부산대학교 도서관

The Hall resistivity, magnetoresistance, and magnetization of La_{1-x}Ca_{x}CoO_{3} epitaxial films with x between 0.25 and 0.4 grown on lanthanum aluminate were measured in fields up to 7 T. The x=1/3 film, shows a reentrant metal insulator transition. Below 100 K, the x=1/3 and 0.4 films have significant coercivity which increases with decreasing temperature. At low temperature the Hall resistivity remains large and essentially field independent in these films, except for a sign change at the coercive field that is more abrupt than the switching of the magnetization. A unique magnetoresistance behavior accompanies this effect. These results are discussed in terms of a percolation picture and the mixed spin state model for this system. We propose that the low-temperature Hall effect is caused by spin-polarized carriers scattering off of orbital disorder in the spin-ordered clusters.
Comment: REVTeX 4, 3 pages with 4 encapsulated postscript graphics. Submitted to MMM 2002 conference proceedings (J. Appl. Phys.)