학술논문
以奈米壓痕與穿透式電子顯微鏡分析氮化鋁鎵半導體薄膜之力學特性 / Mechanical Characteristics of AIGaN Thin Films by Nanoindentation and Transmission Electron Microscopy
Document Type
Article
Author
簡賸瑞 / Sheng-Rui Jian; 林亭均 / Ting-Chun Lin; 楊秉豐 / Ping-Feng Yang; 賴逸少 / Yi-Shao Lai; 莊振益 / Jenh-Yih Juang
Source
科儀新知 / Instruments Today. Issue 181, p68-74. 7 p.
Subject
Language
繁體中文
ISSN
1019-5440
Abstract
This article reports a nanomechanical response study of the contact-induced deformation behavior in Alol6Ga0.84 thin film by means of a combination of nanoindentation and the cross-sectional transmission electron microscopy (XTEM) techniques. Alol6Ga0.84N thin film is deposited by using the metal-organic chemical vapor deposition (MOCVD) method. Hardness and Young's modulus of the Al0.16Ga0.84N films were measured by a Berkovich nanoindenter operated with the continuolls contact stiffness measurements (CSM) mode. The obtained values of the hardness and Young's modulus are 19.76±0.15 GPa and 310.63±9.41 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple ”pop-ins” observed in the load-displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation The absence of discontinuities are in the unloading segments of load-displacement curve suggests that no pressure-induced phase transition was involved.