부산대학교 도서관

SiC/(SiC)x(AlN)1−xfilms were deposited on on-axis Si-face 6H-SiC(0001) substrates by the physical vapor transport (PVT) method. The chemistry of SiC/(SiC)x(AlN)1−xis similar to that of many hexagonal materials that have no polytype. In turn, using this material system as a substrate will reduce the defects in epitaxially grown films. We report the growth and characterization results of a (SiC)x(AlN)1−xsolid solution substrate suitable for GaN epitaxial growth. (SiC)x(AlN)1−xcrystals were grown by physical vapor transport (PVT) in a vertical geometry. We used the solid-solution ranging from 30 to 80% AlN in the mixture. The quality was characterized by X-ray, PL, and SEM. X-ray rocking curves showed that crystals with a fwhm of less than 200 arcsec could be grown. We observed a hexagonal morphology, and we did not observe micropipes. The suitability of this substrate was evaluated by growing a GaN film on this substrate using the MOCVD method. The morphology, nucleation, and grain growth of GaN were studied to understand the source of defects in the film and to understand the overall growth mechanism.