부산대학교 도서관

AbstractThe phase formation sequences of Si-P alloy thin films with P concentrations between 20 and 44 at.% have been studied. The samples were annealed at progressively higher temperatures and the newly formed phases were identified both after each annealing step by ex-situconventional X-ray diffraction (XRD) and continuously by in-situsynchrotron XRD. It was found that Si was the only phase to form in a sample with 20at.%P since the evaporation of P at the crystallization temperature prevented phosphides from forming. For a sample with 30at.%P, the Si12P5phase formed prior to the SiP phase. For samples with 35 and 44at.%P, the formation of SiP preceded the formation of the Si12.P5phase. The experimentally determined phase formation sequences were successfully predicted by a proposed model. According to the model, the first and second crystalline phases to form are those with the lowest and next-lowest crystallization temperatures of the competing compounds predicted by the Gibbs free-energy diagram.