학술논문

Valence Band Engineering by a Layer Insertion to Sillén–Aurivillius Perovskite Oxyhalides
Document Type
Article
Source
Chemistry Letters; August 2017, Vol. 46 Issue: 8 p1083-1085, 3p
Subject
Language
ISSN
03667022; 13480715
Abstract
We investigated the structural and optical properties of (A0.6X)Bi4(Nb0.6W0.4)O8X (A = K, Rb, Cs and X = Cl, Br). We found that these Sillén–Aurivillius-related oxyhalides have band gaps of ca. 3.1 eV (X = Cl) and ca. 2.8 eV (X = Br), which are surprisingly larger than 2.4 eV for the archetypal Bi4NbO8Cl, meaning a substantial stabilization of O-2p orbitals upon A0.6X layer insertion. The present study suggests versatile possibilities of band gap engineering in Sillén–Aurivillius type compounds.We synthesized (A0.6X)Bi4(Nb0.6W0.4)O8X (A = Cs, Rb, K and X = Cl, Br), which are structurally related to a Sillén–Aurivillius type perovskite Bi4NbO8X. It is found that the insertion of A0.6X layer to Bi4MO8X induces a drastic enhancement of the band gap. This result offers an extensive tuning of valence band in the Sillén–Aurivillius based compounds by changing layer stacking sequence.