학술논문
Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical–thermal model
Document Type
Article
Author
Source
Physica Status Solidi (A) - Applications and Materials Science; August 2010, Vol. 207 Issue: 8 p1820-1826, 7p
Subject
Language
ISSN
18626300; 18626319
Abstract
For gallium nitride GaN based microwave power devices, the thermal behavior due to the selfheating effect constitutes a main limitation because the power dissipation is very high. For this study, a predictive physical–thermal model has been developed to analyze the physical and thermal phenomena observed in experiment.In this paper, the thermal performances of AlGaNGaN epitaxies grown on different substrates are determined. It is found that compared with Si substrate, composite substrates: SopSiC monoSipolySiC and SiCopSiC monoSiCpolySiC substrates V. Hoel et al., Electron. Lett. 44, 238 2008 1and T.J. Anderson et al., J. Vac. Sci. Technol. B 24, 2302 2006 2 present better thermal resistances especially at high dissipated power densities with an improvement of 18 for SopSiC substrate and 25 for SiCopSiC substrate at 12 Wmm. Furthermore, polycrystalline diamond is the most promising substrate with a thermal resistance of 5.4 Wm·K at 12 Wmm. The simulation results, such as lattice temperature and thermal resistance, are in good agreement with our measurements.