학술논문
Low frequency and microwave performances of Ba0.6 Sr0.4 TiO3 films on atomic layer deposited TiO2 /high resistivity Si substrates
Document Type
Article
Author
Source
Journal of Electroceramics; December 2006, Vol. 17 Issue: 2-4 p421-425, 5p
Subject
Language
ISSN
13853449; 15738663
Abstract
Abstract: We report on high tunablity of Ba0.6 Sr0.4 TiO3 (BST) thin films realized through the use of atomic layer deposited TiO2 films as a microwave buffer layer between BST and a high resistivity (HR) Si substrate. Coplanar waveguide (CPW) meander-line phase shifters using BST/TiO2 /HR-Si and BST/MgO structures exhibited a differential phase shift of 95∘ and 24.4∘ , respectively, at 15 GHz under an electric field of 10 kV/cm. The figure of merit of the phase shifters at 15 GHz was 30.6∘ /dB for BST film grown on a TiO2 /HR-Si substrate and 12.2∘ /dB for BST film grown on a MgO single crystal substrate. These results constitute significant progress in integrating BST films with conventional silicon technology.