부산대학교 도서관

We attempted to obtain an epitaxial MnSi?(??1.7) film on R-sapphire, i.e., Sapphire(1102), substrate by pulsed laser deposition. We prepared MnSi?films by changing the substrate temperature gradient. It was found that the MnSi?film, whose temperature gradient in a substrate is parallel to Sapphire[1120], could be grown epitaxially on the substrate. The epitaxial relationship was MnSi?(1000)[0010] ? Sapphire(1102)[1120]. The thermoelectric properties of the epitaxial MnSi?film were different in the a- and c-axes, reflecting the anisotropic MnSi?crystal structure. The anisotropic thermoelectric properties are discussed in terms of the electronic structure.