학술논문

A Study on the Removal Method of Si Residue during Si Wet Etching
Document Type
Article
Source
ECS Transactions; August 2013, Vol. 58 Issue: 6 p57-61, 5p
Subject
Language
ISSN
19385862; 19386737
Abstract
In this paper, problems that can occur during the poly-Si wet etch in the semiconductor process are used and methods to solve these problems are introduced. In order to prevent the substrate from being damaged, we generally use a wet etching process that uses alkali solutions rather than dry etching process. If poly si residues remain after etch process in this critical step, it bring about a huge impact on the wafer yield.

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