부산대학교 도서관

This work reports that, for the first time, the engineering of eSiGe proximity and eSiGe layer-one (L1) thickness modulates gate oxide integrity and device performance simultaneously in the leading edge FinFET technology. It is observed that there is a tradeoff between the benefit of transistor performance and the cost of gate oxide breakdown voltage (Vbd) degradation. TEM analysis indicates that eSiGe L1 is exposed to interfacial-layer/high-K in replaced-metal-gate (RMG) processes, suggesting gate oxide Vbd is compromised by germanium oxide formation at the L1 and high-k boundary. Thus, the strategy of FinFET junction optimization needs to consider not only transistor performance but also the gate oxide integrity.