학술논문
Single-sided p+n and double-sided silicon strip detectors exposed to fluences up to 2×1014/cm224GeV protons
Document Type
Article
Author
Source
Nuclear Instruments and Methods in Physics Research Section A; May 1998, Vol. 409 Issue: 1-3 p184-193, 10p
Subject
Language
ISSN
01689002
Abstract
Single-sided p+n and double-sided detectors have been designed for surviving the drastic changes of material properties expected from their use in the harsh radiation environment at the LHC. Detectors optimized for capacitive charge division readout have been exposed to a fluence of 2×1014/cm224GeV protons. Their principal design characteristics and properties after irradiation are described. An explanation for the hitherto not understood survival of single-sided p+n detectors is given. First results with single-sided p+n detectors optimized for binary readout are presented.