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Selected Area Manipulation of MoS2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing.

Document Type

Article

Author

Lasseter, John; Gellerup, Spencer; Ghosh, Sujoy; Yun, Seok Joon; Vasudevan, Rama; Unocic, Raymond R.; Olunloyo, Olugbenga; Retterer, Scott T.; Xiao, Kai; Randolph, Steven J.; Rack, Philip D.

Source

ACS Applied Materials & Interfaces; 2/21/2024, Vol. 16 Issue 7, p9144-9154, 11p

Subject

Language

ISSN

19448244

Online Access

Full Text (ACS) Web of Science JCR 저널정보 Scopus Find it@PNU

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