학술논문
Phosphorus incorporation and activity in 100oriented homoepitaxial diamond layers
Document Type
Article
Source
Physica Status Solidi (A) - Applications and Materials Science; September 2009, Vol. 206 Issue: 9 p2000-2003, 4p
Subject
Language
ISSN
18626300; 18626319
Abstract
In this work, we present a study about the homoepitaxial growth of phosphorusdoped diamond on 100 substrates. The growth was performed by microwave plasma assisted chemical vapor deposition MPCVD adding an organic precursor for phosphorus tertiarybutylphosphine: TBP in the gaseous phase. We show that phosphorus is incorporated in 100 chemical vapor deposition CVD diamond as proved by secondary ion mass spectrometry SIMS. The recombination of excitons bound to phosphorus donors is observed by cathodoluminescence CL spectroscopy. The influence of the growth parameters on the phosphorus donor activity is investigated. We show that the CH2 ratio is a key parameter for controlling the Pdonor activity when diamond is grown on 100 surfaces.