부산대학교 도서관

Single phase GaGdN and GaGdN:Si thin films were grown by gas source molecular beam epitaxy using solid Gd, Ga, and Si sources along with a RF nitrogen plasma. SQUID magnetometry indicated room temperature ferromagnetism in both materials. Defects played a large role in the magnetic ordering of the material, as seen in a drastic reduction of magnetic signal with degrading crystallinity. Highly resistive films became conductive with the addition of Si. Magnetization of the co-doped film increased with Si content, reaching levels higher than that of the singly-doped material.