학술논문
Schottky gating high mobility Si/Si1−xGex2D electron systems
Document Type
Article
Author
Source
Thin Solid Films; July 2000, Vol. 369 Issue: 1-2 p316-319, 4p
Subject
Language
ISSN
00406090
Abstract
A high mobility (3.6×105cm2/V s) n-type Si/Si1−xGexheterostructure has been Schottky gated using Au metal to cover the whole of the device. Over the front-gate voltage (Vg) range for which there was negligible gate leakage (−0.1 V