학술논문
Impact of Plasma Treatment of n-Al0.87 Ga0.13 N:Si Surfaces on V/Al/Ni/Au Contacts in Far-UVC LEDs
Document Type
Article
Author
Source
IEEE Photonics Technology Letters; September 2023, Vol. 35 Issue: 17 p915-918, 4p
Subject
Language
ISSN
10411135
Abstract
We investigated the effect of treating the surface of n-Al0.87 Ga0.13 N:Si by O2 or SF6 plasma on the properties of subsequently deposited and annealed V/Al/Ni/Au contacts. Whereas an O2 plasma treatment increases the contact resistivity, an SF6 plasma treatment decreases it. The operating voltage of far-UVC LEDs emitting at 233 nm could thus be reduced by 2.2 V for a current of 50 mA. The results underline the detrimental impact of oxygen on the formation of low-resistance contacts on n-AlGaN surfaces with high Al mole fraction.