학술논문
Frequency dependent plasma characteristics in a capacitively coupled 300?mm wafer plasma processing chamber
Document Type
Article
Source
Plasma Sources Science and Technology; June 2006, Vol. 15 Issue: 4 p879-888, 10p
Subject
Language
ISSN
09630252
Abstract
Argon plasma characteristics in a dual-frequency, capacitively coupled, 300?mm-wafer plasma processing system were investigated for rf drive frequencies between 10 and 190?MHz. We report spatial and frequency dependent changes in plasma parameters such as line-integrated electron density, ion saturation current, optical emission and argon metastable density. For the conditions investigated, the line-integrated electron density was a nonlinear function of drive frequency at constant rf power. In addition, the spatial distribution of the positive ions changed from uniform to peaked in the centre as the frequency was increased. Spatially resolved optical emission increased with frequency and the relative optical emission at several spectral lines depended on frequency. Argon metastable density and spatial distribution were not a strong function of drive frequency. Metastable temperature was approximately 400?K.