학술논문
Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates
Document Type
Article
Author
Source
Materials Science Forum; September 2007, Vol. 556 Issue: 1 p721-724, 4p
Subject
Language
ISSN
02555476; 16629752
Abstract
In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different nitrogen doping levels. The epilayers were grown on (100) silicon. Doping level (N) and eventual dopant contamination (Al) were analyzed by C-V and/or SIMS. The specific contact resistance was determined by using Transmission Line Model (TLM) patterns for each condition (doping and annealing). Our results clearly evidence that very low specific contact resistance (~10-51.cm²) is obtained on highly doped 3C-SiC epilayers, enlightening the interest of both material and Ni contacts for future devices fabrication.