학술논문
Study of HfO2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron Spectroscopy
Document Type
Article
Author
Source
ECS Transactions; October 2010, Vol. 33 Issue: 3 p467-472, 6p
Subject
Language
ISSN
19385862; 19386737
Abstract
We have investigated the influence of Si-cap layer and the post deposition annealing (PDA) on compositional depth profiles and chemical structures of HfO2/Si-cap/strained Ge/SiGe/Si interfaces by angle-resolved X-ray photoemission spectroscopy. Analyses of Ge 2p, Si 1s and O 1s spectra show that strained-Ge layer was oxidized during the deposition of HfO2 in the case of 1 nm in thickness of the Si cap layer and that Ge layer was not oxidized in the case of 3nm and 5nm in thickness of the Si cap layer.