학술논문
Effect of Various Surface Treatments on Chemical Bonding State at La2O3/In0.53Ga0.47As and on In0.53Ga0.47As Surface
Document Type
Article
Author
Source
ECS Transactions; October 2011, Vol. 41 Issue: 3 p265-272, 8p
Subject
Language
ISSN
19385862; 19386737
Abstract
We have investigated the influence of HF, (NH4)2S and Hexa Methy Disilazane (HMDS) treatments on thermal stability of high-k/In0.53Ga0.47As interface and the chemical bonding states at high-k/In0.53Ga0.47As interface by the X-ray (hv= 1486.6eV) photoemission spectroscopy. The control of the oxide formation on In0.53Ga0.47As surface was tried by surface treatment. Analyses of As 3d, Ga 3p, In 3d, S 1s, Si 2p, N 1s, O 1s and C 1s spectra show that the oxidation of In0.53Ga0.47As was suppressed by various surface treatments.