학술논문
High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide.
Document Type
Article
Author
Source
ACS Applied Materials & Interfaces; 4/17/2024, Vol. 16 Issue 15, p19057-19067, 11p
Subject
Language
ISSN
19448244