학술논문
Promotion of NO2Sensing Performance with Ag Modified DDT/Au/GaAs-Based Schottky Diode
Document Type
Article
Author
Source
Journal of the Electrochemical Society; January 2020, Vol. 167 Issue: 4 p047507-047507, 1p
Subject
Language
ISSN
00134651; 19457111
Abstract
The promotion of nitrogen dioxide (NO2) sensing performance is obtained based on an Ag modified 1, 10-decanedithiol (DDT)/Au/n-GaAs Schottky diode. A semiconductor process and immersion treatment are employed in the device’s fabrication. The effects of Ag concentration and DDT molecules are studied by Fourier-transform infrared spectroscopy (FTIR). The interactions between NO2gas molecules, Ag, and DDT are analyzed with X-ray photoelectron spectroscopy (XPS). The influences of the immersion Ag concentration, NO2concentration, and operating temperature are investigated in this work. Experimentally, a high sensing response of 133.4 under 100 ppm NO2ambience at 25 °C of the studied Ag/DDT/Au/n-GaAs device is obtained. In addition, the lowest detecting level (LDL) of 1 ppm NO2gas at 25 °C is acquired for the studied device. The studied device also shows high selectivity toward NO2gas at room temperature. Compared to some resistance-type and solid-electrochemical sensors, the studied device is suitable for low temperature operation.