학술논문
Analyzing the transient effects of 60Co gamma rays in a CIS by Monte Carlo method
Document Type
Article
Author
Source
Nuclear Science and Techniques; July 2019, Vol. 30 Issue: 7 p1-7, 7p
Subject
Language
ISSN
10018042; 22103147
Abstract
The objective of this work is to analyze the transient effects of 60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.