학술논문
Raman Study of the Comparative Effects of Conventional and Microwave Annealing on MgTiO3Thin Films Sputtered on Si Substrate
Document Type
Article
Author
Source
Physica Status Solidi (A) - Applications and Materials Science; June 2022, Vol. 219 Issue: 11
Subject
Language
ISSN
18626300; 18626319
Abstract
The impact of conventional and microwave annealing (CA and MA, respectively) on MgTiO3thin films sputtered on a silicon substrate has been investigated by Raman spectroscopy. This article studies the impact of temperature, time, and atmosphere used for CA and MA on the structural properties of these layers. The results show that the MgTiO3film crystallinity is better after an MA performed at 800 °C for 5 min under air atmosphere. At the same time, the oxygen vacancies density in the layer is lower. Moreover, the occurrence of the TiO2, Mg2TiO4, and MgTi2O5phases after CA and MA is strongly dependent on the temperature, time, and atmosphere of the annealing process as well as the type of annealing. To our knowledge, this is the first time that the impact of MA on the structural properties of MgTiO3films has been compared to that of CA and studied by Raman spectroscopy. This article investigates the impact of temperature, time, and atmosphere used for conventional and microwave annealing on the structural properties of MgTiO3layers deposited on silicon substrate by sputtering. The achievement of TiO2, Mg2TiO4, and MgTi2O5phases is strongly dependent on the temperature, time, and atmosphere of the annealing process as well as the type of annealing.