학술논문
Method for Extracting Ge Concentration of SiGe Channel FinFET Device Using Three-Dimensional Spectroscopic Ellipsometry-Optical Critical Dimension Metrology
Document Type
Article
Author
Source
ECS Solid State Letters; January 2014, Vol. 3 Issue: 9 pP105-P107, 3p
Subject
Language
ISSN
21628742; 21628750
Abstract
The Ge concentration play an importion role in SiGe channel Fin-FET device. A fast, more convenient, and nondestructive analysis method, three-dimensional spectroscopic ellipsometry-optical critical dimension metrology (3D SE-OCD), is used to extract Ge concentrations of SiGe channel FinFETs. The refractive index (n) and extinction index (k) of SiGe with different Ge concentrations investigated under wavelengths ln = 370 nm and lk = 525 nm. Results show the Ge concentration of SiGe channel can be accurately measured using a 3D SE-OCD.