학술논문

The quantitative determination of the degree of ordering of Ga0·51In0·49P using transmission electron microscopy
Document Type
Article
Source
Philosophical Magazine A; March 1994, Vol. 69 Issue: 3 p615-631, 17p
Subject
Language
ISSN
01418610; 14606992
Abstract
A method is described which enables the degree of ordering of GaxIn1-xP to be quantitatively determined from measurements of the diffraction intensities by transmission electron microscopy. The morphology of the ordering within the layers has a profound effect on both the approach which must be adopted and the interpretation of the measurements. Using this method we have measured values of the order parameter S which range from 0·16 to 0·85 for layers of Ga0·51In0·49P grown under different conditions.

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