학술논문
High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology.
Document Type
Article
Author
Source
Crystals (2073-4352); Mar2024, Vol. 14 Issue 3, p253, 9p
Subject
Language
ISSN
20734352
Abstract
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