학술논문
Ion and neutral transportation consideration in etching of thin Si3 N4 in high aspect ratio structures for aspect ratio independent etching.
Document Type
Article
Author
Source
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; May/Jun2006, Vol. 24 Issue 3, p1292-1296, 5p, 1 Black and White Photograph, 1 Diagram, 5 Graphs
Subject
Language
ISSN
10711023
Abstract
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