학술논문
Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate.
Document Type
Article
Author
Source
IEEE Electron Device Letters; Apr2015, Vol. 36 Issue 4, p303-305, 3p
Subject
Language
ISSN
07413106
Abstract
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