학술논문
Design of a 6 kV Beta-Ga2 O3 PN Heterojunction Diode with Etched Double-Layered NiO with a Figure of Merit of 10 GW cm-2 .
Document Type
Article
Author
Source
ECS Journal of Solid State Science & Technology; Apr2022, Vol. 11 Issue 4, p382-388, 7p
Subject
Language
ISSN
21628769