학술논문
Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth.
Document Type
Article
Author
Source
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 6, p3158-3161, 4p
Subject
Language
ISSN
10711023