학술논문
Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfA1O High-κ Tunneling and Control Oxides: Device Fabrication and Electrical Performance.
Document Type
Article
Author
Source
IEEE Transactions on Electron Devices; Nov2004, Vol. 51 Issue 11, p1840-1848, 9p
Subject
Language
ISSN
00189383
Abstract
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