학술논문

0.5 V Supply Voltage Operation of In0.65Ga0.35As/GaAs0.4Sb0.6 Tunnel FET.
Document Type
Article
Source
IEEE Electron Device Letters; Jan2015, Vol. 36 Issue 1, p20-22, 3p
Subject
FIELD-effect transistors
ELECTRIC potential
INDIUM gallium arsenide
GALLIUM arsenide
CURRENT-voltage characteristics
Language
ISSN
07413106
Abstract
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