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Inversion n-channel GaN MOSFETs with atomic-layer-deposited A12O3 as gate dielectrics.

Document Type

Article

Author

Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Shiu, K.H.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.

Source

2008 Device Research Conference; 2008, p81-82, 2p

Subject

Language

Online Access

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