학술논문
Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology.
Document Type
Article
Author
Source
Advances in Condensed Matter Physics; 2014, p1-7, 7p
Subject
Language
ISSN
16878108
Abstract
Copyright of Advances in Condensed Matter Physics is the property of Hindawi Limited and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)