학술논문
Origin of Voids at the SiO2 /SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance.
Document Type
Article
Author
Source
ECS Journal of Solid State Science & Technology; Mar2023, Vol. 12 Issue 3, p1-8, 8p
Subject
Language
ISSN
21628769