학술논문

Realization of Selector‐Memory Bi‐Functionality with Self‐Current Regulation Utilizing Poly‐Crystalline Based GST Electrolyte for Memristor Hardware Development.
Document Type
Article
Source
Advanced Materials Interfaces; Apr2024, Vol. 11 Issue 12, p1-9, 9p
Subject
NONVOLATILE memory
PHASE change memory
MATERIALS analysis
ELECTROLYTES
THIN films
Language
ISSN
21967350
Abstract
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