학술논문

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review.
Document Type
Article
Source
Crystals (2073-4352); Jul2023, Vol. 13 Issue 7, p1106, 11p
Subject
OHMIC contacts
LASER annealing
SILICON solar cells
X-ray diffraction
SILICON carbide
SEMICONDUCTOR lasers
COMPUTER performance
Language
ISSN
20734352
Abstract
Copyright of Crystals (2073-4352) is the property of MDPI and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)