학술논문

Investigation of Hydration Reaction-Induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors.
Document Type
Article
Source
IEEE Electron Device Letters; Oct2015, Vol. 36 Issue 10, p1050-1052, 3p
Subject
PROTONS
THIN film transistors
HYDROGEN ions
PASSIVATION
THRESHOLD voltage
Language
ISSN
07413106
Abstract
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