학술논문
Positive-Bias-Temperature-Instability Induced Random-Trap-Fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs.
Document Type
Article
Author
Source
IEEE Electron Device Letters; Sep2022, Vol. 43 Issue 9, p1396-1399, 4p
Subject
Language
ISSN
07413106
Abstract
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