학술논문
Over 6 MV/cm operation in β-Ga2 O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy.
Document Type
Article
Author
Source
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May2024, Vol. 42 Issue 3, p1-8, 8p
Subject
Language
ISSN
07342101
Abstract
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