학술논문

Surface energy engineering for LiTaO3 and α-quartz SiO2 for low temperature (<220 °C) wafer bonding.
Document Type
Article
Source
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2019, Vol. 37 Issue 4, pN.PAG-N.PAG, 17p
Subject
SEMICONDUCTOR wafer bonding
SURFACE energy
ACOUSTIC surface wave devices
LOW temperatures
SEMICONDUCTOR lasers
QUARTZ
LIGHT filters
Language
ISSN
07342101
Abstract
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