학술논문
High-Accuracy Deep Neural Networks Using a Contralateral-Gated Analog Synapse Composed of Ultrathin MoS₂ nFET and Nonvolatile Charge-Trap Memory.
Document Type
Article
Author
Source
IEEE Electron Device Letters; Nov2020, Vol. 41 Issue 11, p1649-1652, 4p
Subject
Language
ISSN
07413106
Abstract
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