학술논문

Direct MBE growth of metamorphic nBn infrared photodetectors on 150 mm Ge-Si substrates for heterogeneous integration.
Document Type
Article
Source
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May2019, Vol. 37 Issue 3, pN.PAG-N.PAG, 6p
Subject
CHEMICAL vapor deposition
FOCAL plane arrays sensors
PHOTOLUMINESCENCE
PHOTODETECTORS
MOLECULAR beam epitaxy
X-ray diffraction measurement
QUANTUM efficiency
Language
ISSN
21662746
Abstract
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